RUMORED BUZZ ON N TYPE GE

Rumored Buzz on N type Ge

s is always that on the substrate substance. The lattice mismatch contributes to a sizable buildup of pressure Strength in Ge levels epitaxially developed on Si. This strain Electrical power is primarily relieved by two mechanisms: (i) era of lattice dislocations within the interface (misfit dislocations) and (ii) elastic deformation of each the su

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